2.1. NMOS-Specs¶
VGS ≤ 1.65 V @ 125°C
Parameter | Name | Unit | Min | Target | Max | Meas.Cond. | Comment |
---|---|---|---|---|---|---|---|
Threshold VoltageShort Channel Device | VTN10x013 | V | 0.43 | 0.50 | 0.55 | A.a1 | WxL = 10 x 0.13 µm² |
Threshold VoltageLong Channel Device | VTN10x10 | V | 0.16 | 0.20 | 0.24 | A.a1 | WxL = 10 x 10 µm² |
Threshold VoltageSmall Channel Device | VTN015x013 | V | 0.4 | 0.54 | 0.68 | A.a1 | WxL = 0.15 x 0.13 µm² |
Saturation CurrentShort Channel Device | IDSN013 | µA/µm | 380 | 480 | 600 | A.b1 | WxL = 10 x 0.13 µm² |
Off-CurrentShort Channel Device | IOFFN013 | LOG10(A/µm) | -10 | -9 | A.c1 | WxL = 10 x 0.13 µm² | |
Drain Induced BarrierLowering 0.1/1.2V | DIBLN013 | mV/V | 20 | 50 | 80 | A.d1 | WxL = 10 x 0.13 µm² |
Sub Threshold Slope | SSN013 | mV/dec | 76 | 82 | 88 | A.e | WxL = 10 x 0.13 µm² |
Breakdown Voltage | BVDSSN013 | V | 2.0 | 2.7 | A.f1 | WxL = 10 x 0.13 µm² | |
Effective ChannelLength | LEFFN013 | µm | 0.10 | 0.14 | 0.19 | A.g1 | WxL = 10 x 0.13 µm² |
Effective ChannelWidth | WEFFN015 | µm | 0.09 | 0.15 | 0.22 | A.h1 | WxL = 0.15 x 0.13 µm² |
Miller CapacitanceNMOS | CMILLERN | fF/µm | 0.32 | 0.36 | 0.40 | A.k1 | |
Junction CapacitanceNMOS | CJUNCTIONN | fF/µm² | 0.9 | 0.95 | 1.0 | A.k | |
Junction Breakdown | BVNPW | 12 | A.f3 |
2.2. PMOS-Specs¶
Tip
VGS ≤ 1.65 V @ 125°C
Parameter | Name | Unit | Min | Target | Max | Meas.Cond. | Comment |
---|---|---|---|---|---|---|---|
Threshold Voltage Short Channel Device | VTP10x013 | V | -0.53 | -0.47 | -0.41 | A.a1 | WxL = 10 x 0.13 µm² |
Threshold Voltage Long Channel Device | VTP10x10 | V | -0.41 | -0.36 | -0.31 | A.a1 | WxL = 10 x 10 µm² |
Threshold Voltage Small Channel Device | VTP015x013 | V | -0.58 | -0.48 | -0.38 | A.a1 | WxL = 0.15 x 0.13 µm² |
Saturation Current Short Channel Device | IDSP013 | µA/µm | -270 | -215 | -170 | A.b1 | WxL = 10 x 0.13 µm² |
Off-Current Short Channel Device | IOFFP013 | LOG10 (A/µm) | -10.3 | -9.3 | A.c1 | WxL = 10 x 0.13 µm² | |
Drain Induced Barrier Lowering 0.1/1.2V | DIBLP013 | mV/V | 25 | 50 | 75 | A.d1 | WxL = 10 x 0.13 µm² |
Sub Threshold Slope | SSP013 | mV/dec | -87 | -81 | -75 | A.e | WxL = 10 x 0.13 µm² |
Breakdown Voltage | BVDSSP013 | V | -2.9 | -2.2 | A.f1 | WxL = 10 x 0.13 µm² | |
Effective Channel Length | LEFFP013 | µm | 0.07 | 0.10 | 0.13 | A.g1 | WxL = 10 x 0.13 µm² |
Effective Channel Width | WEFFP015 | µm | 0.17 | 0.24 | 0.31 | A.h1 | WxL = 0.15 x 0.13 µm² |
Miller Capacitance | CMILLERP | fF/µm | 0.31 | 0.35 | 0.39 | A.k1 | |
Junction Capacitance | CJUNCTIONP | fF/µm² | 0.8 | 0.85 | 0.9 | A.k | |
Junction Breakdown | BVPNW | V | -12 | A.f3 |
2.3. iNMOS-Specs¶
Tip
VGS ≤ 1.65 V @ 125°C
Parameter | Name | Unit | Min | Target | Max | Meas.Cond. | Comment |
---|---|---|---|---|---|---|---|
Threshold VoltageShort Channel Device | VTNI10x013 | V | 0.43 | 0.50 | 0.55 | A.a1 | WxL = 10 x 0.13 µm² |
Saturation CurrentShort Channel Device | IDSNI013 | µA/µm | 380 | 480 | 600 | A.b1 | WxL = 10 x 0.13 µm² |
Off-CurrentShort Channel Device | IOFFNI013 | LOG10(A/µm) | -10 | -9 | A.c1 | WxL = 10 x 0.13 µm² | |
Drain Induced BarrierLowering 0.1/1.2V | DIBLNI013 | mV/V | 20 | 50 | 80 | A.d1 | WxL = 10 x 0.13 µm² |
Sub Threshold Slope | SSNI013 | mV/dec | 76 | 82 | 88 | A.e | WxL = 10 x 0.13 µm² |
Breakdown Voltage | BVDSSNI013 | V | 2.0 | 2.7 | A.f1 | WxL = 10 x 0.13 µm² |
2.4. HV-NMOS-Specs¶
Tip
VGS ≤ 3.3V (Maximum) @ 27°C for LG ≥ 0.6 µm
Parameter | Name | Unit | Min | Target | Max | Meas.Cond. | Comment |
---|---|---|---|---|---|---|---|
Threshold VoltageShort Channel Device | VTNHV10x045 | V | 0.63 | 0.70 | 0.77 | A.a2 | WxL = 10 x 0.45 µm² |
Threshold VoltageLong Channel Device | VTNHV10x10 | V | 0.65 | 0.69 | 0.73 | A.a2 | WxL = 10 x 10 µm² |
Threshold VoltageSmall Channel Device | VTNHV030x045 | V | 0.59 | 0.67 | 0.75 | A.a2 | WxL = 0.30 x 0.45 µm² |
Saturation CurrentShort Channel Device | IDSNHV045 | µA/µm | 480 | 560 | 640 | A.b2 | WxL = 10 x 0.45 µm² |
Off-CurrentShort Channel Device | IOFFNHV045 | LOG10(A/µm) | -12.5 | -11.0 | A.c2 | WxL = 10 x 0.45 µm² | |
Drain Induced BarrierLowering 0.1/1.8V | DIBLNHV045 | mV/V | 15 | 30 | A.d2 | WxL = 10 x 0.45 µm² | |
Sub Threshold Slope | SSNHV045 | mV/dec | 72 | 84 | 96 | A.e | WxL = 10 x 0.45 µm² |
Breakdown Voltage | BVDSSNHV045 | V | 5.3 | 6.1 | A.f2 | WxL = 10 x 0.45 µm² | |
Effective ChannelLength | LEFFNHV045 | µm | 0.26 | 0.31 | 0.36 | A.g2 | WxL = 10 x 0.45 µm² |
Effective ChannelWidth | WEFFNHV030 | µm | 0.23 | 0.28 | 0.33 | A.h2 | WxL = 0.30 x 0.45 µm² |
Miller Capacitance | CMILLERNHV | fF/µm | 0.42 | 0.45 | 0.48 | A.k1 | |
Junction Capacitance | CJUNC-TIONNHV | fF/µm² | 0.74 | 0.80 | 0.86 | A.k | |
Junction Breakdown | BVNPWhv | V | 12 | A.f3 |
2.5. HV-PMOS-Specs¶
Tip
VGS ≤ 3.3V (Maximum) @ 27°C for LG ≥ 0.5 µm
Parameter | Name | Unit | Min | Target | Max | Meas.Cond. | Comment |
---|---|---|---|---|---|---|---|
Threshold VoltageShort Channel Device | VTPHV10x04 | V | -0.71 | -0.65 | -0.59 | A.a2 | WxL = 10 x 0.4 µm² |
Threshold VoltageLong Channel Device | VTPHV10x10 | V | -0.78 | -0.70 | -0.64 | A.a2 | WxL = 10 x 10 µm² |
Threshold VoltageSmall Channel Device | VTPHV03x04 | V | -0.71 | -0.64 | -0.57 | A.a2 | WxL = 0.3 x 0.4 µm² |
Saturation CurrentShort Channel Device | IDSPHV04 | µA/µm | -290 | -240 | -190 | A.b2 | WxL = 10 x 0.4 µm² |
Off-CurrentShort Channel Device | IOFFPHV04 | LOG10(A/µm) | -12.5 | -11.5 | A.c2 | WxL = 10 x 0.4 µm² | |
Drain Induced BarrierLowering 0.1/3.3V | DIBLPHV04 | mV/V | 5 | 15 | A.d2 | WxL = 10 x 0.4 µm² | |
Sub Threshold Slope | SSPHV04 | mV/dec | -102 | -92 | -82 | A.e | WxL = 10 x 0.4 µm² |
Breakdown Voltage | BVDSSPHV04 | V | -6.3 | -5.3 | A.f2 | WxL = 10 x 0.4 µm² | |
Effective ChannelLength | LEFFPHV04 | µm | 0.24 | 0.30 | 0.36 | A.g2 | WxL = 10 x 0.4 µm² |
Effective ChannelWidth | WEFFPHV03 | µm | 0.26 | 0.33 | 0.40 | A.h2 | WxL = 0.3 x 0.4 µm² |
Miller Capacitance | CMILLERPHV | fF/µm | 0.32 | 0.35 | 0.38 | A.k1 | |
Junction Capacitance | CJUNCTION-PHV | fF/µm² | 0.74 | 0.80 | 0.86 | A.k | |
Junction Breakdown | BVPNWhv | V | -12 | A.f3 |
2.6. HV-iNMOS-Specs¶
Tip
VGS ≤ 3.3V (Maximum) @ 27°C for LG ≥ 0.6 µm
Parameter | Name | Unit | Min | Target | Max | Meas.Cond. | Comment |
---|---|---|---|---|---|---|---|
Threshold VoltageShort Channel Device | VTNIHV10x045 | V | 0.63 | 0.70 | 0.77 | A.a2 | WxL = 10 x 0.45 µm² |
Saturation CurrentShort Channel Device | IDSNIHV045 | µA/µm | 480 | 560 | 640 | A.b2 | WxL = 10 x 0.45 µm² |
Off-CurrentShort Channel Device | IOFFNIHV045 | LOG10(A/µm) | -12.5 | -11.0 | A.c2 | WxL = 10 x 0.45 µm² | |
Drain Induced BarrierLowering 0.1/1.8V | DIBLNIHV045 | mV/V | 15 | 30 | A.d2 | WxL = 10 x 0.45 µm² | |
Sub Threshold Slope | SSNIHV045 | mV/dec | 72 | 84 | 96 | A.e | WxL = 10 x 0.45 µm² |
Breakdown Voltage | BVDSSNIHV045 | V | 5.2 | 6.1 | A.f2 | WxL = 10 x 0.45 µm² |
2.7. Rsil-Specs¶
Tip
Rsil utilizes salicided, n-doped gate polysilicon as resistor material.
Parameter | Name | Unit | Min | Target | Max | Meas.Cond. | Comment |
---|---|---|---|---|---|---|---|
Sheet Resistance | RSNRSIL | Ω | 6.2 | 7.0 | 7.8 | A.i | |
Line Width Delta | DWRSIL | nm | -20 | 10 | 40 | A.i | |
Temperature Coefficients | TC1NRSIL | ppm/K | 3100 | A.af | |||
Temperature Coefficients | TC2NRSIL | ppm/K² | 0.3 | A.af | |||
Matching Coefficient | MATRSIL1 | nm | 6 | A.ac | |||
Matching Coefficient | MATRSIL2 | nm | 1.4 | A.ac | |||
Metal-to-Body-Resistance | RCRSIL | 4.5 | A.ae | ||||
Max. Current Density | Is limited by contacts, please refer chapter 2.9 |
2.8. Rppd-Specs¶
Tip
Rppd utilizes unsalicided, p-doped gate polysilicon as resistor material. For realizing precision resistors, a line width of 2µm or higher is recommended.
Parameter | Name | Unit | Min | Target | Max | Meas.Cond. | Comment |
---|---|---|---|---|---|---|---|
Sheet Resistance | RSRPPD | Ω | 235 | 260 | 285 | A.i | |
Line Width Delta | DWRPPD | nm | -24 | 6 | 36 | A.i | |
Temperature Coefficients | TC1NRPPD | ppm/K | 170 | A.af | |||
Temperature Coefficients | TC2NRPPD | ppm/K² | 0.4 | A.af | |||
Matching Coefficient | MATRPPD | nm | 15 | A.ac | |||
Metal-to-Body-Resistance | RCRPPD | Ω*µm | 35 | A.ae | |||
Temperature CoefficientMetal-toBody-Resistance | TC3NRPPD | ppm/K | -950 | ||||
Max. Current Density | IMRPPD | mA/μm | 1.2 | 11 years @105°C |
2.9. Rhigh-Specs¶
Tip
Rhigh utilizes unsalicided, partially compensated gate polysilicon as resistor material.
Parameter | Name | Unit | Min | Target | Max | Meas.Cond. | Comment |
---|---|---|---|---|---|---|---|
Sheet Resistance | RSRHIGH | Ω | 1160 | 1360 | 1560 | A.i | |
Line Width Delta | DWRHIGH | nm | -80 | -40 | A.i | ||
Temperature Coefficients | TC1NRHIGH | ppm/K | -2300 | A.af | |||
Temperature Coefficients | TC2NRHIGH | ppm/K² | 2.1 | A.af | |||
Matching Coefficient | MATRHIGH | nm | 48 | A.ac | |||
Metal-to-Body-Resistance | RCRHIGH | Ω*µm | 80 | A.ae | |||
Max. Current Density | IMRHIGH | mA/μm | 0.6 | 11 years @105°C |
2.10. Schottky_nbl1-Specs¶
Tip
This Schottky barrier diode utilizes Nbulay as cathode.
Parameter | Name | Unit | Min | Target | Max | Meas.Cond. | Comment |
---|---|---|---|---|---|---|---|
Reverse current density | IRNBL1 | µA/µm² | -1 | -0.1 | 0.3 x 1.0 µm²@ -2.5 V | ||
Diode Voltage | VFNBL1 | V | 0.34 | 0.39 | 0.44 | 0.3 x 1.0 µm²@ 100 µA/µm² |
2.11. S-Varicap-Specs¶
Tip
Thick Gate Oxide
Parameter | Name | Unit | Min | Target | Max | Meas.Cond. | Comment |
---|---|---|---|---|---|---|---|
Capacitance -3 | SVAR_m3 | fF/µm² | 20.5 | 23 | 25.5 | 10x(3.74x0.3)µm²@15.8GHz | |
Capacitance 0 | SCVAR_0 | fF/µm² | 32 | 35.3 | 37.5 | 10x(3.74x0.3)µm²@15.8GHz | |
Capacitance +3 | SCVAR_3 | fF/µm² | 37.5 | 39.5 | 41.5 | 10x(3.74x0.3)µm²@15.8GHz | |
Q Factor -3 | QFACTOR_m3 | 50 | 62 | 75 | 10x(3.74x0.3)µm²@15.8GHz | ||
Q Factor 0 | QFACTOR_0 | 35 | 43 | 50 | 10x(3.74x0.3)µm²@15.8GHz | ||
Q Factor 3 | QFACTOR_3 | 35 | 43 | 50 | 10x(3.74x0.3)µm²@15.8GHz |
2.12. MIM Capacitor-Specs¶
Parameter | Name | Unit | Min | Target | Max | Meas.Cond. | Comment |
---|---|---|---|---|---|---|---|
Specific Area Capacitance | CMIMA | fF/µm² | 1.35 | 1.5 | 1.65 | A.k | |
Specific CapacitanceMIM Perimeter | CMIMP | aF/µm | 40 | A.l | |||
Breakdown Voltage | BVMIM | V | 15 | 23 | A.y | ||
Voltage Coefficients | VCMIM1 | ppm/V | -26 | A.ah | |||
Voltage Coefficients | VCMIM2 | ppm/V² | 5 | A.ah | |||
Temperature Coefficient | TCMIM1 | ppm/K | 3.6 | A.ad | |||
Temperature Coefficient | TCMIM2 | ppm/K² | 0.002 | A.ad | |||
Matching Coefficient | KCMIM | nm |
2.13. Resistances, Line Width Deltas, Temperature Coefficients¶
Parameter | Name | Unit | Min | Target | Max | Meas.Cond. | Comment |
---|---|---|---|---|---|---|---|
Substrate Resistivity | RSBLK | Ωcm | 37.5 | 50 | 62.5 | Specification:WAFPR3763 | |
Salicided GatPoly (n+) | refer section 2.13 | ||||||
Unsalicized GatPoly (n+) | refer section 2.14 | ||||||
Unsalicided GatPoly (p+) | refer section 2.15 | ||||||
Metal1 SnakeSheet Resistance | SNAKEM1 | mΩ | 90 | 115 | 145 | width = 0.16 µm | |
Unsalicided nSD-ActivSheet Resistance | RSNSD0 | Ω | 55 | 67 | 79 | ||
Unsalicided pSD-ActivSheet Resistance | RSPSD0 | Ω | 69 | 79 | 89 | ||
Metal2 SnakeSheet Resistance | SNAKEM2 | mΩ | 70 | 88 | 110 | width = 0.20 µm | |
Metal3 SnakeSheet Resistance | SNAKEM3 | mΩ | 70 | 88 | 110 | width = 0.20 µm | |
Metal4 SnakeSheet Resistance | SNAKEM4 | mΩ | 70 | 88 | 110 | width = 0.20 µm | |
Metal5 SnakeSheet Resistance | SNAKEM5 | mΩ | 70 | 88 | 110 | width = 0.20 µm | |
TopMetal1 SnakeSheet Resistance | SNAKETM1 | mΩ | 14 | 18 | 22 | width = 1.5 µm | |
TopMetal2 SnakeSheet Resistance | SNAKETM2 | mΩ | 7.5 | 11 | 14.5 | width = 2.0 µm | |
Metal1 Sheet Resistance | RSMET1 | mΩ | 85 | 110 | 135 | A.i | |
Metal2 Sheet Resistance | RSMET2 | mΩ | 73 | 88 | 103 | A.i | |
Metal3 Sheet Resistance | RSMET3 | mΩ | 73 | 88 | 103 | A.i | |
Metal4 Sheet Resistance | RSMET4 | mΩ | 73 | 88 | 103 | A.i | |
Metal5 Sheet Resistance | RSMET5 | mΩ | 73 | 88 | 103 | A.i | |
TopMetal1Sheet Resistance | RSTM1 | mΩ | 15 | 18 | 21 | A.i | |
TopMetal2Sheet Resistance | RSTM2 | mΩ | 7.5 | 11 | 14.5 | A.i | |
Metal1 Line Width Delta | DWMET1 | nm | -64 | -24 | 16 | A.i | |
Metal2 Line Width Delta | DWMET2 | nm | -56 | -16 | 24 | A.i | |
Metal3 Line Width Delta | DWMET3 | nm | -56 | -16 | 24 | A.i | |
Metal4 Line Width Delta | DWMET4 | nm | -56 | -16 | 24 | A.i | |
Metal5 Line Width Delta | DWMET5 | nm | -50 | -20 | 34 | A.i | |
TopMetal1Line Width Delta | DWTM1 | nm | -300 | -100 | 100 | A.i | |
TopMetal2Line Width Delta | DWTM2 | nm | -340 | -140 | 140 | A.i | |
Metal1 Sheet ResistanceTemperature Coefficient | TC1RSMET1 | ppm/K | 3400 | A.af | |||
Metal2 Sheet ResistanceTemperature Coefficient | TC1RSMET2 | ppm/K | 3500 | A.af | |||
Metal3 Sheet ResistanceTemperature Coefficient | TC1RSMET3 | ppm/K | 3500 | A.af | |||
Metal4 Sheet ResistanceTemperature Coefficient | TC1RSMET4 | ppm/K | 3500 | A.af | |||
Metal5 Sheet ResistanceTemperature Coefficient | TC1RSMET5 | ppm/K | 3500 | A.af | |||
TopMetal1 Sheet Resis-tance Temperature Coef-ficient | TC1RSTM1 | ppm/K | 3700 | A.af | |||
TopMetal2 Sheet Resis-tance Temperature Coef-ficient | TC1RSTM2 | ppm/K | 3800 | A.af |
Parameter | Name | Unit | Min | Target | Max | Meas.Cond. | Comment |
---|---|---|---|---|---|---|---|
Metal1 to Silicideon nSD-Activ | RCM1NSD | Ω/CNT | 8 | 17 | 22 | V = 1 V | 93740 contact chain |
Metal1 to Silicideon pSD-Activ | RCM1PSD | Ω/CNT | 8 | 17 | 22 | V = 1 V | 93740 contact chain |
Metal1 to Silicideon GatPoly (n+) | RCM1NPLY | Ω/CNT | 8 | 15 | 20 | V = 1 V | 98566 contact chain |
Metal1 to Silicideon GatPoly (p+) | RCM1PPLY | Ω/CNT | 8 | 15 | 20 | V = 1 V | 98566 contact chain |
Metal2 - Metal1 | RVIA1 | Ω/VIA | 5 | 9 | 20 | V = 1 V | 103840 contact chain |
Metal3 - Metal2 | RVIA2 | Ω/VIA | 5 | 9 | 20 | V = 1 V | 103840 contact chain |
Metal4 - Metal3 | RVIA3 | Ω/VIA | 5 | 9 | 20 | V = 1 V | 103840 contact chain |
Metal5 - Metal4 | RVIA4 | Ω/VIA | 5 | 9 | 20 | V = 1 V | 103840 contact chain |
TopMetal1 - Metal5 | RTV1 | Ω/VIA | 1 | 2.2 | 4 | V = 1 V | 3276 contact chain |
TopMetal2 - TopMetal1 | RTV2 | Ω/VIA | 0.5 | 1.1 | 2.2 | V = 1 V | 1140 contact chain |
2.15. Maximum Current Densities¶
Tip
(11 years @105°C)
Parameter | Name | Unit | Min | Target | Max | Meas.Cond. | Comment |
---|---|---|---|---|---|---|---|
Metal1 | IMAXM1 | mA | 0.36 | A.v | w = 0.16 … 0.36 µm | ||
Metal1 | JMAXM1 | mA/µm | 1 | A.v | w > 0.36 µm | ||
Metal2 | IMAXM2 | mA | 0.6 | A.v | w = 0.2 … 0.3 µm | ||
Metal2 | JMAXM2 | mA/µm | 2 | A.v | w > 0.3 µm | ||
Metal3 | IMAXM3 | mA | 0.6 | A.v | w = 0.2 … 0.3 µm | ||
Metal3 | JMAXM3 | mA/µm | 2 | A.v | w > 0.3 µm | ||
Metal4 | IMAXM4 | mA | 0.6 | A.v | w = 0.2 … 0.3 µm | ||
Metal4 | JMAXM4 | mA/µm | 2 | A.v | w > 0.3 µm | ||
Metal5 | IMAXM5 | mA | 0.6 | A.v | w = 0.2 … 0.3 µm | ||
Metal5 | JMAXM5 | mA/µm | 2 | A.v | w > 0.3 µm | ||
TopMetal1 | JMAXM6 | mA/µm | 15 | A.v | |||
TopMetal2 | JMAXM7 | mA/µm | 16 | A.v | |||
Contact | JMAXCNT | mA/Cnt | 0.3 | A.v | |||
Via1 | JMAXVIA1 | mA/Via | 0.4 | A.v | |||
Via2 | JMAXVIA2 | mA/Via | 0.4 | A.v | |||
Via3 | JMAXVIA3 | mA/Via | 0.4 | A.v | |||
Via4 | JMAXVIA4 | mA/Via | 0.4 | A.v | |||
TopVia1 | JMAXTVIA1 | mA/Via | 1.4 | A.v | |||
TopVia2 | JMAXTVIA2 | mA/Via | 10 | A.v |
2.16. Layer Thickness Values¶
Parameter | Name | Unit | Min | Target | Max | Meas.Cond. | Comment |
---|---|---|---|---|---|---|---|
Shallow TrenchIsolator Thickness | TSTI | nm | 400 | A.ag | |||
Gate Polysilicon Thickness | TGATPOLY | nm | 150 | 160 | 170 | A.w | |
Thickness of Gate Oxide | TGOXNW | nm | 2.25 | 2.45 | 2.65 | A.x | |
Thickness of Gate OxideHV-MOS | TGOX1NW | nm | 6.8 | 7.3 | 7.8 | A.x | |
Thickness of Gate Oxide | TGOXPW | nm | 2.45 | 2.65 | 2.85 | A.x | |
Thickness of Gate Oxide HV-MOS | TGOX1PW | nm | 7.0 | 7.5 | 8.0 | A.x | |
Metal1 Layer Thickness | TMET1 | nm | 420 | A.ag | |||
Metal2 Layer Thickness | TMET2 | nm | 490 | A.ag | |||
Metal3 Layer Thickness | TMET3 | nm | 490 | A.ag | |||
Metal4 Layer Thickness | TMET4 | nm | 490 | A.ag | |||
Metal5 Layer Thickness | TMET5 | nm | 490 | A.ag | |||
TopMetal1 Layer Thickness | TTM1 | nm | 2000 | A.ag | |||
Isolator Thicknessbetween Metal1 and Activ | TILD0 | nm | 640 | A.w,A.ag | |||
Isolator Thicknessbetween Metal2 and Metal1 | TILD1 | nm | 540 | A.w,A.ag | |||
Isolator Thicknessbetween Metal3 and Metal2 | TILD2 | nm | 540 | A.w,A.ag | |||
Isolator Thicknessbetween Metal4 and Metal3 | TILD3 | nm | 540 | A.w,A.ag | |||
Isolator Thicknessbetween Metal5 and Metal4 | TILD4 | nm | 540 | A.w,A.ag | |||
Isolator Thickness betweenTopMetal1 and Metal5 | TILDTM1 | nm | 850 | A.w,A.ag | |||
MIM Capacitor DielectricThickness | TISMIM | nm | 40 | A.w | |||
MIM Capacitor Top PlateThickness | TMIMTOP | nm | 150 | A.ag | |||
Thickness Values of Passivation Layers | TPASS1 | nm | 1500 | A.ag | Oxide layer SiN layer | ||
Thickness Values of Passivation Layers | TPASS2 | nm | 400 | A.ag | Oxide layer SiN layer | ||
TopMetal2 Layer Thickness | TTM2 | nm | 3000 | A.ag | |||
Isolator Thickness between TopMetal2 and TopMetal1 | TILTM2 | nm | 2800 | A.w,A.ag |
2.17. Parasitic Capacitances¶
Parameter | Name | Unit | Min | Target | Max | Meas.Cond. | Comment |
---|---|---|---|---|---|---|---|
Metal1 - ActivArea Capacitance | CAMET1ACT | aF/µm² | 49 | 59 | 69 | A.aq | A = 250·1200 µm² |
Metal1 - SubstrateArea Capacitance | CAMET1SUB | aF/µm² | 31 | 37 | 43 | A.aq | A = 250·1200 µm² |
Metal1 - Metal2Area Capacitance | CAMET1/2 | aF/µm² | 54 | 68 | 82 | A.aq | A = 250·1200 µm² |
Metal2 - Metal3Area Capacitance | CAMET2/3 | aF/µm² | 54 | 68 | 82 | A.aq | A = 250·1200 µm² |
Metal3 - Metal4Area Capacitance | CAMET3/4 | aF/µm² | 54 | 68 | 82 | A.aq | A = 250·1200 µm² |
Metal4 - Metal5Area Capacitance | CAMET4/5 | aF/µm² | 54 | 68 | 82 | A.aq | A = 250·1200 µm² |
TopMetal1 - Metal5Area Capacitance | CATOPMET1 | aF/µm² | 36 | 42.5 | 49 | A.aq | A = 250·1200 µm² |
TopMetal2 - TopMetal1Area Capacitance | CATOPMET2 | aF/µm² | 10 | 13 | 16 | A.aq | A = 250·1200 µm² |